benefits: small, rugged compact design: 7.5k cubic mm, ? (31mm sq x 7.41mm max height) mtbf > 2 million hours ? slc (single-level cell) nand flash ? harsh environment operation (0-70 ? o c operations with future -40 o c to +85 o c) benefits: nand flash controller ? (2) stacks, each containing (2 or 4) nand ? components each nand component, either a 4,8 or 16gb device, ? based on the use of single silicon and stacked silicon solutions providing a total bit density of either 4,8 or 16gb ? controller contained in base interposer ? fast ata host to buffer transfer rates supporting true ? ide, pio/4 mode support 512byte sector buffers ? flash memory power-down logic ? ecc correction = 6 bytes within a 512 byte sector ? automatic sleep mode ? burst transfer rate, 16.67mb per second ? sustained transfer rate: 6.7mb per second ? sophisticated wear leveling ? product offerings: AS3SSD4GB8PBG 4 gb, ? 5.0v/3.3v, 7.7mb/sec sustained, 31mm sq x 5.01mm high as3ssd8gb8pbg 8 gb, ? 5.0v/3.3v, 7.7mb/sec sustained, 31mm sq x 7.41 mm high as3ssd16gb5pbg 16gb, ? 5.0v/3.3v, 5.0mb/sec sustained, 31mm sq x 7.41 mm high applications: military, aerospace & industrial ? applications embedded computing applications ? mobile computing, digital radio ? transportation ? high-speed networking and enterprise ? applications ultra portables ? handheld devices ? solid state disk on chip as3ssdxxgbxpbg 4 / 8 & 16gb nand (slc) flash memory subsystem www.micross.com
4gb 8gb & 16gb rev. 2.7 5/10 8701 cross park drive austin, texas 78754 phone: 512.339.1188 fax: 512.835.8358 semiconductors@micross.com www.micross.com mechanical definitions specifications 5.01mm 0.61mm (2)high + base 7.41mm 0.61mm
|
